DN2535N3-GP013
vs
DN2535ND
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROCHIP TECHNOLOGY INC
|
| Package Description |
CYLINDRICAL, O-PBCY-T3
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| Drain Current-Max (ID) |
0.12 A
|
|
| Drain-source On Resistance-Max |
25 Ω
|
25 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
5 pF
|
5 pF
|
| JEDEC-95 Code |
TO-92
|
|
| JESD-30 Code |
O-PBCY-T3
|
S-XUUC-N2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
SQUARE
|
| Package Style |
CYLINDRICAL
|
UNCASED CHIP
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
THROUGH-HOLE
|
NO LEAD
|
| Terminal Position |
BOTTOM
|
UPPER
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
1
|
| Rohs Code |
|
No
|
| Additional Feature |
|
LOW THRESHOLD
|
| DS Breakdown Voltage-Min |
|
350 V
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
150 °C
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare DN2535N3-GP013 with alternatives
Compare DN2535ND with alternatives