DN2535ND
vs
DN2535N3P002
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
SUPERTEX INC
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Additional Feature
LOW THRESHOLD
LOW THRESHOLD
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
350 V
350 V
Drain-source On Resistance-Max
25 Ω
25 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
5 pF
5 pF
JESD-30 Code
S-XUUC-N2
O-PBCY-T3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
DEPLETION MODE
DEPLETION MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
SQUARE
ROUND
Package Style
UNCASED CHIP
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
NO LEAD
THROUGH-HOLE
Terminal Position
UPPER
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Package Description
CYLINDRICAL, O-PBCY-T3
HTS Code
8541.29.00.95
Drain Current-Max (ID)
0.17 A
JEDEC-95 Code
TO-92
Power Dissipation Ambient-Max
1 W
Compare DN2535ND with alternatives
Compare DN2535N3P002 with alternatives