CQ28C010-250 vs WME128K8-250CQ feature comparison

CQ28C010-250 LSI Corporation

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WME128K8-250CQ Microsemi Corporation

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Rohs Code No No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SEEQ TECHNOLOGY INC MICROSEMI CORP
Package Description DIP, DIP32,.6 0.600 INCH, HERMETIC SEALED, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32
Reach Compliance Code unknown unknown
ECCN Code EAR99 3A001.A.2.C
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 250 ns 250 ns
Additional Feature AUTOMATIC WRITE;PAGE WRITE;BULK ERASE HARDWARE AND SOFTWARE DATA PROTECTION
Command User Interface NO
Data Polling YES
Endurance 10000 Write/Erase Cycles
JESD-30 Code R-CDIP-T32 R-CDIP-T32
JESD-609 Code e0 e4
Memory Density 1048576 bit 1048576 bit
Memory IC Type EEPROM EEPROM
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 32 32
Number of Words 131072 words 131072 words
Number of Words Code 128000 128000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 125 °C
Operating Temperature-Min -55 °C
Organization 128KX8 128KX8
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Code DIP DIP
Package Equivalence Code DIP32,.6
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Page Size 128 words
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 5 V 5 V
Qualification Status Not Qualified Not Qualified
Standby Current-Max 0.00085 A
Supply Current-Max 0.12 mA
Supply Voltage-Max (Vsup) 5.25 V 5.5 V
Supply Voltage-Min (Vsup) 4.75 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL MILITARY
Terminal Finish TIN LEAD GOLD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.5 mm
Terminal Position DUAL DUAL
Toggle Bit YES
Write Cycle Time-Max (tWC) 10 ms 10 ms
Base Number Matches 1 4
Pbfree Code No
Part Package Code DIP
Pin Count 32
Screening Level MIL-STD-883

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