WME128K8-250CQ
vs
WME128K8-250CM
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
MICROSEMI CORP
|
WHITE MICROELECTRONICS
|
| Part Package Code |
DIP
|
|
| Package Description |
0.600 INCH, HERMETIC SEALED, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32
|
,
|
| Pin Count |
32
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
3A001.A.2.C
|
|
| HTS Code |
8542.32.00.51
|
|
| Access Time-Max |
250 ns
|
250 ns
|
| Additional Feature |
HARDWARE AND SOFTWARE DATA PROTECTION
|
WRITE ENDURANCE 10000 CYCLES; 10 YEARS DATA RETENTION; HARDWARE AND SOFTWARE DATA PROTECTION
|
| JESD-30 Code |
R-CDIP-T32
|
R-CDIP-T32
|
| JESD-609 Code |
e4
|
|
| Memory Density |
1048576 bit
|
1048576 bit
|
| Memory IC Type |
EEPROM
|
EEPROM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
32
|
32
|
| Number of Words |
131072 words
|
131072 words
|
| Number of Words Code |
128000
|
128000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Organization |
128KX8
|
128KX8
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Code |
DIP
|
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Programming Voltage |
5 V
|
5 V
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Screening Level |
MIL-STD-883
|
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
MILITARY
|
MILITARY
|
| Terminal Finish |
GOLD
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.5 mm
|
|
| Terminal Position |
DUAL
|
DUAL
|
| Write Cycle Time-Max (tWC) |
10 ms
|
|
| Base Number Matches |
4
|
4
|
| Data Retention Time-Min |
|
10
|
| Endurance |
|
10000 Write/Erase Cycles
|
| Output Characteristics |
|
3-STATE
|
|
|
|
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