CBR8M-L010
vs
KBU8A
feature comparison
All Stats
Differences Only
Pbfree Code
No
Rohs Code
No
Yes
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
GENESIC SEMICONDUCTOR INC
Package Description
CASE DM, 4 PIN
Pin Count
4
Manufacturer Package Code
CASE DM
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Breakdown Voltage-Min
100 V
50 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Element Material
SILICON
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1 V
JESD-30 Code
R-PSFM-W4
R-PSFM-W4
JESD-609 Code
e0
Non-rep Pk Forward Current-Max
200 A
300 A
Number of Elements
4
4
Number of Phases
1
1
Number of Terminals
4
4
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Output Current-Max
8 A
6 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
100 V
50 V
Reverse Current-Max
10 µA
Reverse Test Voltage
100 V
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
SINGLE
SINGLE
Base Number Matches
1
31
Samacsys Manufacturer
GeneSiC Semiconductor
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare CBR8M-L010 with alternatives