CBR8M-L010
vs
GBU8B-E3/45
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
VISHAY SEMICONDUCTORS
Package Description
CASE DM, 4 PIN
R-PSFM-T4
Pin Count
4
4
Manufacturer Package Code
CASE DM
CASE GBU
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Breakdown Voltage-Min
100 V
100 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Element Material
SILICON
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1 V
JESD-30 Code
R-PSFM-W4
R-PSFM-T4
JESD-609 Code
e0
e3
Non-rep Pk Forward Current-Max
200 A
200 A
Number of Elements
4
4
Number of Phases
1
1
Number of Terminals
4
4
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Output Current-Max
8 A
3.9 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
100 V
100 V
Reverse Current-Max
10 µA
Reverse Test Voltage
100 V
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
WIRE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Base Number Matches
1
2
Case Connection
ISOLATED
Reference Standard
UL RECOGNIZED
Compare CBR8M-L010 with alternatives
Compare GBU8B-E3/45 with alternatives