BSZ0589NSATMA1 vs NTMFS4985NFT3G feature comparison

BSZ0589NSATMA1 Infineon Technologies AG

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NTMFS4985NFT3G onsemi

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Rohs Code Yes
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG ONSEMI
Package Description SMALL OUTLINE, S-PDSO-N3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 20 Weeks 2 Days
Samacsys Manufacturer Infineon onsemi
Avalanche Energy Rating (Eas) 20 mJ 54 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 17 A 17.5 A
Drain-source On Resistance-Max 0.0053 Ω 0.005 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N8 R-PDSO-F5
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 8 5
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 68 A 195 A
Surface Mount YES YES
Terminal Finish Tin (Sn) Matte Tin (Sn) - annealed
Terminal Form NO LEAD FLAT
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code DFN5 5X6, 1.27P (SO 8FL)
Pin Count 5
Manufacturer Package Code 488AA
Feedback Cap-Max (Crss) 60 pF
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 22.73 W
Time@Peak Reflow Temperature-Max (s) 30

Compare BSZ0589NSATMA1 with alternatives

Compare NTMFS4985NFT3G with alternatives