BSC360N15NS3GATMA1
vs
SIR166DP-T1-GE3
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
VISHAY SILICONIX
Package Description
SMALL OUTLINE, R-PDSO-F5
SMALL OUTLINE, R-XDSO-C5
Pin Count
8
8
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Factory Lead Time
16 Weeks
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
80 mJ
80 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
150 V
30 V
Drain Current-Max (ID)
33 A
40 A
Drain-source On Resistance-Max
0.036 Ω
0.0032 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-N8
R-XDSO-C5
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
8
5
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
UNSPECIFIED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
74 W
48 W
Pulsed Drain Current-Max (IDM)
132 A
70 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin (Sn)
MATTE TIN
Terminal Form
NO LEAD
C BEND
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Part Package Code
SOT
Compare BSC360N15NS3GATMA1 with alternatives
Compare SIR166DP-T1-GE3 with alternatives