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Power Field-Effect Transistor, 33A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85X4154
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Newark | Mosfet, N-Ch, 150V, 33A, 150Deg C, 74W, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:33A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSC360N15NS3GATMA1 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 16249 |
|
$0.9100 / $1.8400 | Buy Now |
DISTI #
86AK4481
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Newark | Mosfet, N-Ch, 150V, 33A, Tdson Rohs Compliant: Yes |Infineon BSC360N15NS3GATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.7730 | Buy Now |
DISTI #
BSC360N15NS3GATMA1CT-ND
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DigiKey | MOSFET N-CH 150V 33A 8TDSON Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
17871 In Stock |
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$0.7435 / $2.5000 | Buy Now |
DISTI #
BSC360N15NS3GATMA1
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Avnet Americas | Trans MOSFET N-CH 150V 33A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC360N15NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
E32:1076_02201643
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Arrow Electronics | Trans MOSFET N-CH 150V 33A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2425 | Europe - 3000 |
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$0.6797 / $2.3616 | Buy Now |
DISTI #
V72:2272_06383735
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Arrow Electronics | Trans MOSFET N-CH 150V 33A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2235 Container: Cut Strips | Americas - 3 |
|
$0.6794 | Buy Now |
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Future Electronics | Single N-Channel 150 V 38 mOhm 15 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel | 30000Reel |
|
$0.6650 / $0.6900 | Buy Now |
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Future Electronics | Single N-Channel 150 V 38 mOhm 15 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel | 5000Reel |
|
$0.6650 / $0.6900 | Buy Now |
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Future Electronics | Single N-Channel 150 V 38 mOhm 15 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel | 0Reel |
|
$0.5800 | Buy Now |
DISTI #
84433315
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Verical | Trans MOSFET N-CH 150V 33A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2302 | Americas - 50000 |
|
$0.7981 | Buy Now |
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BSC360N15NS3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC360N15NS3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 33A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 80 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 33 A | |
Drain-source On Resistance-Max | 0.036 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 74 W | |
Pulsed Drain Current-Max (IDM) | 132 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSC360N15NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC360N15NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
BSC360N15NS3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 33A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC360N15NS3GATMA1 vs BSC360N15NS3G |
SI7738DP-T1-GE3 | Vishay Intertechnologies | $1.7992 | Power Field-Effect Transistor, 7.7A I(D), 150V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | BSC360N15NS3GATMA1 vs SI7738DP-T1-GE3 |
BSC093N04LSGATMA1 | Infineon Technologies AG | $0.3521 | Power Field-Effect Transistor, 13A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, MO-240, TDSON-8 | BSC360N15NS3GATMA1 vs BSC093N04LSGATMA1 |
BSC016N04LSG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 100A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC360N15NS3GATMA1 vs BSC016N04LSG |
SIR804DP-T1-GE3 | Vishay Intertechnologies | $2.0950 | Power Field-Effect Transistor, 60A I(D), 100V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | BSC360N15NS3GATMA1 vs SIR804DP-T1-GE3 |
BSC093N04LSG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 13A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, MO-240, TDSON-8 | BSC360N15NS3GATMA1 vs BSC093N04LSG |
SIR880DP-T1-GE3 | Vishay Intertechnologies | $1.8344 | Power Field-Effect Transistor, 60A I(D), 80V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | BSC360N15NS3GATMA1 vs SIR880DP-T1-GE3 |
SIR166DP-T1-GE3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 40A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | BSC360N15NS3GATMA1 vs SIR166DP-T1-GE3 |
BSC520N15NS3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC360N15NS3GATMA1 vs BSC520N15NS3G |
SIR880DP-T1-GE3 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 60A I(D), 80V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | BSC360N15NS3GATMA1 vs SIR880DP-T1-GE3 |