SIR166DP-T1-GE3
vs
BSC520N15NS3G
feature comparison
All Stats
Differences Only
Pbfree Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
VISHAY SILICONIX
INFINEON TECHNOLOGIES AG
Part Package Code
SOT
Package Description
SMALL OUTLINE, R-XDSO-C5
Pin Count
8
8
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
80 mJ
60 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
150 V
Drain Current-Max (ID)
40 A
21 A
Drain-source On Resistance-Max
0.0032 Ω
0.052 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-XDSO-C5
R-PDSO-N8
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
5
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
48 W
57 W
Pulsed Drain Current-Max (IDM)
70 A
84 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
Tin (Sn)
Terminal Form
C BEND
NO LEAD
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Rohs Code
Samacsys Manufacturer
Infineon
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare SIR166DP-T1-GE3 with alternatives
Compare BSC520N15NS3G with alternatives