BSC042N03LSG vs FDS7082N3 feature comparison

BSC042N03LSG Infineon Technologies AG

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FDS7082N3 Fairchild Semiconductor Corporation

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG FAIRCHILD SEMICONDUCTOR CORP
Package Description GREEN, PLASTIC, TDSON-8 FLMP, SO-8
Pin Count 8 8
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 50 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 20 A 17.5 A
Drain-source On Resistance-Max 0.0065 Ω 0.006 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8 R-PDSO-G8
JESD-609 Code e3 e4
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 57 W 3 W
Pulsed Drain Current-Max (IDM) 372 A 60 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn) NICKEL PALLADIUM GOLD
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Part Package Code SOT

Compare BSC042N03LSG with alternatives

Compare FDS7082N3 with alternatives