BRC114EMP
vs
PUMB11T/R
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
RENESAS TECHNOLOGY CORP
NXP SEMICONDUCTORS
Package Description
SMALL OUTLINE, R-PDSO-G3
SMALL OUTLINE, R-PDSO-G6
Pin Count
3
6
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 1
BUILT IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
30
30
JESD-30 Code
R-PDSO-G3
R-PDSO-G6
Number of Elements
1
2
Number of Terminals
3
6
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
NPN
PNP
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Rohs Code
Part Package Code
SC-88
JESD-609 Code
e3
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Terminal Finish
Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare BRC114EMP with alternatives
Compare PUMB11T/R with alternatives