Findchips: Compare BRC114EMP vs RN2401(T5L,PP,F)

BRC114EMP vs RN2401(T5L,PP,F) feature comparison

Buy Now Datasheet

Buy Now Datasheet

Part Life Cycle Code	Transferred	Obsolete
Ihs Manufacturer	HITACHI LTD	TOSHIBA CORP
Package Description	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Pin Count	3
Reach Compliance Code	unknown	unknown
ECCN Code	EAR99	EAR99
Additional Feature	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC)	0.1 A	0.1 A
Collector-Emitter Voltage-Max	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)	30	30
JESD-30 Code	R-PDSO-G3	R-PDSO-G3
Number of Elements	1	1
Number of Terminals	3	3
Package Body Material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package Shape	RECTANGULAR	RECTANGULAR
Package Style	SMALL OUTLINE	SMALL OUTLINE
Polarity/Channel Type	NPN	PNP
Qualification Status	Not Qualified
Surface Mount	YES	YES
Terminal Form	GULL WING	GULL WING
Terminal Position	DUAL	DUAL
Transistor Application	SWITCHING	SWITCHING
Transistor Element Material	SILICON	SILICON
Base Number Matches	2	1
HTS Code		8541.21.00.75
Collector-Base Capacitance-Max		6 pF
Operating Temperature-Max		150 °C
Power Dissipation Ambient-Max		0.2 W
Power Dissipation-Max (Abs)		0.2 W
Transition Frequency-Nom (fT)		200 MHz
VCEsat-Max		0.3 V
	Transistors » Small Signal Bipolar Transistors	Transistors » Small Signal Bipolar Transistors