We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

BRC114EMP vs UNR921EG feature comparison

BRC114EMP Renesas Electronics Corporation

Buy Now Datasheet

UNR921EG Panasonic Electronic Components

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RENESAS TECHNOLOGY CORP PANASONIC CORP
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-F3
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 0.47
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30 60
JESD-30 Code R-PDSO-G3 R-PDSO-F3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Rohs Code Yes
JESD-609 Code e6
Moisture Sensitivity Level 1
Terminal Finish TIN BISMUTH
Transition Frequency-Nom (fT) 150 MHz
Transistors » Small Signal Bipolar Transistors
Transistors » Small Signal Bipolar Transistors

Compare BRC114EMP with alternatives

Compare UNR921EG with alternatives