BFU550W
vs
MPS918
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
NXP SEMICONDUCTORS
MOTOROLA INC
Package Description
SMALL OUTLINE, R-PDSO-G3
CYLINDRICAL, O-PBCY-T3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
NXP
Additional Feature
LOW NOISE
Collector Current-Max (IC)
0.05 A
0.05 A
Collector-Emitter Voltage-Max
12 V
15 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
60
20
Highest Frequency Band
L BAND
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
R-PDSO-G3
O-PBCY-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-40 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
ROUND
Package Style
SMALL OUTLINE
CYLINDRICAL
Polarity/Channel Type
NPN
NPN
Power Dissipation-Max (Abs)
0.45 W
0.625 W
Reference Standard
AEC-Q101; IEC-60134
Surface Mount
YES
NO
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
DUAL
BOTTOM
Transistor Application
AMPLIFIER
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
11000 MHz
600 MHz
Base Number Matches
1
17
HTS Code
8541.21.00.75
Collector-Base Capacitance-Max
3 pF
JEDEC-95 Code
TO-226AA
JESD-609 Code
e0
Power Dissipation Ambient-Max
0.85 W
Power Gain-Min (Gp)
15 dB
Qualification Status
Not Qualified
Terminal Finish
Tin/Lead (Sn/Pb)
VCEsat-Max
0.4 V
Compare BFU550W with alternatives
Compare MPS918 with alternatives