BFU550W
vs
2N2857
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
MOTOROLA INC
Package Description
SMALL OUTLINE, R-PDSO-G3
CYLINDRICAL, O-MBCY-W4
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
NXP
Additional Feature
LOW NOISE
LOW NOISE
Collector Current-Max (IC)
0.05 A
0.04 A
Collector-Emitter Voltage-Max
12 V
15 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
60
30
Highest Frequency Band
L BAND
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
R-PDSO-G3
O-MBCY-W4
Number of Elements
1
1
Number of Terminals
3
4
Operating Temperature-Max
150 °C
Operating Temperature-Min
-40 °C
Package Body Material
PLASTIC/EPOXY
METAL
Package Shape
RECTANGULAR
ROUND
Package Style
SMALL OUTLINE
CYLINDRICAL
Polarity/Channel Type
NPN
NPN
Power Dissipation-Max (Abs)
0.45 W
Reference Standard
AEC-Q101; IEC-60134
Surface Mount
YES
NO
Terminal Form
GULL WING
WIRE
Terminal Position
DUAL
BOTTOM
Transistor Application
AMPLIFIER
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
11000 MHz
1000 MHz
Base Number Matches
1
27
HTS Code
8541.21.00.75
Collector-Base Capacitance-Max
1 pF
JEDEC-95 Code
TO-206AF
JESD-609 Code
e0
Power Dissipation Ambient-Max
0.3 W
Power Gain-Min (Gp)
12.5 dB
Qualification Status
Not Qualified
Terminal Finish
TIN LEAD
Compare BFU550W with alternatives
Compare 2N2857 with alternatives