BFU550W vs MPSH10-T/R feature comparison

BFU550W NXP Semiconductors

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MPSH10-T/R NXP Semiconductors

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer NXP
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.05 A 0.04 A
Collector-Emitter Voltage-Max 12 V 25 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 60 60
Highest Frequency Band L BAND ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G3 O-PBCY-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.45 W
Reference Standard AEC-Q101; IEC-60134 CECC
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL BOTTOM
Transistor Application AMPLIFIER SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 11000 MHz 650 MHz
Base Number Matches 1 1
Part Package Code TO-92
Pin Count 3
HTS Code 8541.29.00.75
Collector-Base Capacitance-Max 0.65 pF
JEDEC-95 Code TO-92
Power Dissipation Ambient-Max 1 W
Qualification Status Not Qualified
VCEsat-Max 0.5 V

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