NE94430-T2
vs
BFR181-E6327
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
CALIFORNIA EASTERN LABORATORIES
|
SIEMENS A G
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
SMALL OUTLINE, R-PDSO-G3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.05 A
|
0.02 A
|
| Collector-Base Capacitance-Max |
1.2 pF
|
0.45 pF
|
| Collector-Emitter Voltage-Max |
15 V
|
12 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
40
|
50
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
L BAND
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
2000 MHz
|
8000 MHz
|
| VCEsat-Max |
0.5 V
|
|
| Base Number Matches |
2
|
2
|
| HTS Code |
|
8541.21.00.75
|
| Additional Feature |
|
LOW NOISE
|
| Power Dissipation Ambient-Max |
|
0.175 W
|
|
|
|
Compare NE94430-T2 with alternatives
Compare BFR181-E6327 with alternatives