BF556A,215 vs BF512TRL feature comparison

BF556A,215 NXP Semiconductors

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BF512TRL NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Part Package Code TO-236
Package Description PLASTIC PACKAGE-3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.75
Samacsys Manufacturer NXP
Configuration SINGLE SINGLE
DS Breakdown Voltage-Min 30 V 20 V
FET Technology JUNCTION JUNCTION
Highest Frequency Band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode DEPLETION MODE DEPLETION MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.25 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Pbfree Code Yes
Drain Current-Max (ID) 0.03 A

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