BF556A,215 vs BF556A feature comparison

BF556A,215 NXP Semiconductors

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BF556A North American Philips Discrete Products Div

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NXP SEMICONDUCTORS NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV
Part Package Code TO-236
Package Description PLASTIC PACKAGE-3 ,
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.75
Samacsys Manufacturer NXP
Configuration SINGLE
DS Breakdown Voltage-Min 30 V
FET Technology JUNCTION JUNCTION
Highest Frequency Band VERY HIGH FREQUENCY BAND
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.25 W 0.25 W
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish TIN Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Base Number Matches 1 3

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