BD682
vs
TIP127
feature comparison
All Stats
Differences Only
Rohs Code
No
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Case Connection
ISOLATED
Collector Current-Max (IC)
4 A
5 A
Collector-Emitter Voltage-Max
100 V
120 V
Configuration
DARLINGTON
DARLINGTON
DC Current Gain-Min (hFE)
750
1000
JEDEC-95 Code
TO-126
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
PNP
PNP
Power Dissipation Ambient-Max
40 W
Power Dissipation-Max (Abs)
40 W
65 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
10 MHz
VCEsat-Max
2.5 V
Base Number Matches
1
1
Part Package Code
SFM
Package Description
TO-220, 3 PIN
Pin Count
3
Compare BD682 with alternatives
Compare TIP127 with alternatives