BCR562
vs
MUN5111DW1T1
feature comparison
Part Life Cycle Code |
Transferred
|
Contact Manufacturer
|
Ihs Manufacturer |
SIEMENS A G
|
LESHAN RADIO CO LTD
|
Package Description |
SMALL OUTLINE, R-PDSO-G3
|
,
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.21.00.75
|
|
Additional Feature |
BUILT-IN BIAS RESISTOR RATIO IS 1
|
|
Collector Current-Max (IC) |
0.5 A
|
0.1 A
|
Collector-Emitter Voltage-Max |
50 V
|
|
Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
|
DC Current Gain-Min (hFE) |
60
|
35
|
JESD-30 Code |
R-PDSO-G3
|
|
Number of Elements |
1
|
2
|
Number of Terminals |
3
|
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
SMALL OUTLINE
|
|
Polarity/Channel Type |
PNP
|
PNP
|
Power Dissipation Ambient-Max |
0.33 W
|
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
|
Terminal Position |
DUAL
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Transition Frequency-Nom (fT) |
150 MHz
|
|
VCEsat-Max |
0.3 V
|
|
Base Number Matches |
2
|
6
|
Power Dissipation-Max (Abs) |
|
0.385 W
|
|
|
|
Compare BCR562 with alternatives
Compare MUN5111DW1T1 with alternatives