MUN5111DW1T1
vs
BCR505
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
MOTOROLA INC
SIEMENS A G
Package Description
SMALL OUTLINE, R-PDSO-G6
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.95
8541.21.00.95
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
BUILT-IN BIAS RESISTOR RATIO IS 4.5454
Collector Current-Max (IC)
0.1 A
0.5 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
35
70
JESD-30 Code
R-PDSO-G6
R-PDSO-G3
JESD-609 Code
e0
Number of Elements
2
1
Number of Terminals
6
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
PNP
NPN
Power Dissipation Ambient-Max
0.15 W
0.33 W
Power Dissipation-Max (Abs)
0.15 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Element Material
SILICON
SILICON
Base Number Matches
6
2
Transistor Application
SWITCHING
Transition Frequency-Nom (fT)
100 MHz
VCEsat-Max
0.3 V
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