BCR523E6327HTSA1 vs PDTD123YT,215 feature comparison

BCR523E6327HTSA1 Infineon Technologies AG

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PDTD123YT,215 Nexperia

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Rohs Code Yes Yes
Part Life Cycle Code End Of Life Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG NEXPERIA
Package Description SMALL OUTLINE, R-PDSO-G6 PLASTIC PACKAGE-3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Nexperia
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 0.1 BUILT-IN BIAS RESISTOR RATIO IS 0.21
Collector Current-Max (IC) 0.5 A 0.5 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 70 70
JESD-30 Code R-PDSO-G6 R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 6 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type NPN NPN
Surface Mount YES YES
Terminal Finish Tin (Sn) TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 100 MHz
Base Number Matches 1 1
Part Package Code TO-236
Pin Count 3
Manufacturer Package Code SOT23
JEDEC-95 Code TO-236AB
Operating Temperature-Max 150 °C
Qualification Status Not Qualified
Reference Standard IEC-60134

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Compare PDTD123YT,215 with alternatives