PDTD123YT,215 vs BCR523-E6433 feature comparison

PDTD123YT,215 Nexperia

Buy Now Datasheet

BCR523-E6433 Siemens

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer NEXPERIA SIEMENS A G
Part Package Code TO-236
Package Description PLASTIC PACKAGE-3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Nexperia
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 0.21 BUILT-IN BIAS RESISTOR RATIO IS 10
Collector Current-Max (IC) 0.5 A 0.5 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 70 70
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Reference Standard IEC-60134
Surface Mount YES YES
Terminal Finish TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
HTS Code 8541.21.00.95
Power Dissipation Ambient-Max 0.33 W
Transition Frequency-Nom (fT) 100 MHz
VCEsat-Max 0.3 V

Compare PDTD123YT,215 with alternatives