BB182,115
vs
JDV2S14E
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Not Recommended
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
TOSHIBA CORP
|
| Part Package Code |
SOD
|
SOD
|
| Package Description |
ULTRA SMALL, PLASTIC, SC-79, 2 PIN
|
R-PDSO-F2
|
| Pin Count |
2
|
2
|
| Manufacturer Package Code |
SOD523
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.80
|
| Samacsys Manufacturer |
NXP
|
Toshiba
|
| Additional Feature |
2% MATCHED SETS OF 10 DIODES ARE AVAILABLE
|
|
| Breakdown Voltage-Min |
32 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Cap Tolerance |
8.77%
|
6.94%
|
| Diode Capacitance Ratio-Min |
20.6
|
1.25
|
| Diode Capacitance-Nom |
57 pF
|
60.5 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
| Frequency Band |
VERY HIGH FREQUENCY
|
|
| JESD-30 Code |
R-PDSO-F2
|
R-PDSO-F2
|
| JESD-609 Code |
e3
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
35 V
|
10 V
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
TIN LEAD
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
DUAL
|
DUAL
|
| Variable Capacitance Diode Classification |
ABRUPT
|
ABRUPT
|
| Base Number Matches |
1
|
2
|
|
|
|
Compare BB182,115 with alternatives
-
BB182,115 vs 934047500335
-
BB182,115 vs BB182T/R
-
BB182,115 vs 1T359
-
BB182,115 vs ZC930TC
-
BB182,115 vs ZMV933A
-
BB182,115 vs BB143,115
-
BB182,115 vs BB143T/R
-
BB182,115 vs BBY62TRL
-
BB182,115 vs SMV1251-079LF
Compare JDV2S14E with alternatives