BAS21-V-GS08
vs
BAS21212
feature comparison
All Stats
Differences Only
Pbfree Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
VISHAY SEMICONDUCTORS
NXP SEMICONDUCTORS
Package Description
R-PDSO-G3
R-PDSO-G3
Pin Count
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Application
GENERAL PURPOSE
GENERAL PURPOSE
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1.25 V
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Pk Forward Current-Max
2.5 A
9 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Output Current-Max
0.2 A
0.2 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
0.25 W
0.25 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
250 V
250 V
Reverse Recovery Time-Max
0.05 µs
0.05 µs
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Base Number Matches
2
1
Reverse Current-Max
0.1 µA
Compare BAS21-V-GS08 with alternatives
Compare BAS21212 with alternatives