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BAS21-V-GS08 vs BAS21VD,165 feature comparison

BAS21-V-GS08 Vishay Semiconductors

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BAS21VD,165 NXP Semiconductors

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Pbfree Code Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer VISHAY SEMICONDUCTORS NXP SEMICONDUCTORS
Package Description R-PDSO-G3 R-PDSO-G6
Pin Count 3 6
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SEPARATE, 3 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
JESD-30 Code R-PDSO-G3 R-PDSO-G6
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 2.5 A
Number of Elements 1 3
Number of Phases 1
Number of Terminals 3 6
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.2 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Power Dissipation-Max 0.25 W 0.25 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 250 V 250 V
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 2 2
Rohs Code Yes
Part Package Code TSOP
Manufacturer Package Code SOT457
Operating Temperature-Min -65 °C
Reverse Current-Max 100 µA
Reverse Test Voltage 200 V
Diodes » Signal Diodes
Diodes » Rectifier Diodes

Compare BAS21-V-GS08 with alternatives

Compare BAS21VD,165 with alternatives