BAS21212
vs
BAS21VD
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
NXP SEMICONDUCTORS
NXP SEMICONDUCTORS
Package Description
R-PDSO-G3
PLASTIC, SC-74, 6 PIN
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Application
GENERAL PURPOSE
Configuration
SINGLE
SEPARATE, 3 ELEMENTS
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.25 V
1 V
JESD-30 Code
R-PDSO-G3
R-PDSO-G6
Non-rep Pk Forward Current-Max
9 A
Number of Elements
1
3
Number of Phases
1
Number of Terminals
3
6
Operating Temperature-Max
150 °C
150 °C
Output Current-Max
0.2 A
0.2 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Power Dissipation-Max
0.25 W
0.25 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
250 V
250 V
Reverse Current-Max
0.1 µA
100 µA
Reverse Recovery Time-Max
0.05 µs
0.05 µs
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Base Number Matches
1
3
Pbfree Code
Rohs Code
Part Package Code
SC-74
Pin Count
6
JESD-609 Code
e3
Moisture Sensitivity Level
1
Operating Temperature-Min
-65 °C
Peak Reflow Temperature (Cel)
260
Reverse Test Voltage
200 V
Terminal Finish
Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
30
Compare BAS21212 with alternatives
Compare BAS21VD with alternatives