BAR14-1
vs
HVM14TR-E
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
SIEMENS A G
|
RENESAS ELECTRONICS CORP
|
| Package Description |
R-PDSO-G3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Application |
SWITCHING
|
ATTENUATOR
|
| Breakdown Voltage-Min |
100 V
|
50 V
|
| Configuration |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
|
SINGLE
|
| Diode Capacitance-Max |
0.5 pF
|
|
| Diode Capacitance-Nom |
0.25 pF
|
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Forward Resistance-Max |
7 Ω
|
7 Ω
|
| Diode Res Test Current |
0.01 mA
|
|
| Diode Res Test Frequency |
100 MHz
|
|
| Diode Type |
PIN DIODE
|
PIN DIODE
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| JESD-609 Code |
e0
|
e6
|
| Minority Carrier Lifetime-Nom |
1 µs
|
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reverse Test Voltage |
50 V
|
|
| Surface Mount |
YES
|
YES
|
| Technology |
POSITIVE-INTRINSIC-NEGATIVE
|
POSITIVE-INTRINSIC-NEGATIVE
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN BISMUTH
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
3
|
1
|
| Pbfree Code |
|
Yes
|
| Factory Lead Time |
|
4 Weeks
|
| Moisture Sensitivity Level |
|
1
|
| Power Dissipation-Max |
|
0.1 W
|
|
|
|
Compare BAR14-1 with alternatives
Compare HVM14TR-E with alternatives