AT-41435
vs
AT-41435G
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
HEWLETT PACKARD CO
|
BROADCOM LTD
|
| Package Description |
MICROWAVE, S-CXMW-F4
|
CERAMIC, 35 MICRO-X-4
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.75
|
|
| Additional Feature |
LOW NOISE, HIGH RELIABILITY
|
HIGH RELIABILITY, LOW NOISE
|
| Collector Current-Max (IC) |
0.06 A
|
0.06 A
|
| Collector-Emitter Voltage-Max |
12 V
|
12 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
30
|
|
| Highest Frequency Band |
C BAND
|
C BAND
|
| JESD-30 Code |
S-CXMW-F4
|
X-CXMW-F4
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Temperature-Max |
200 °C
|
150 °C
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
SQUARE
|
UNSPECIFIED
|
| Package Style |
MICROWAVE
|
MICROWAVE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
0.5 W
|
|
| Power Dissipation-Max (Abs) |
0.5 W
|
0.5 W
|
| Power Gain-Min (Gp) |
13 dB
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
MATTE TIN
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
UNSPECIFIED
|
UNSPECIFIED
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
8000 MHz
|
8000 MHz
|
| Base Number Matches |
1
|
1
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
|
|
|
Compare AT-41435 with alternatives
Compare AT-41435G with alternatives