ARS35J
vs
AR3506G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
LITE-ON SEMICONDUCTOR CORP
Package Description
O-PEDB-N2
O-PEDB-N2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
LOW LEAKAGE CURRENT
Application
GENERAL PURPOSE
GENERAL PURPOSE
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1 V
JESD-30 Code
O-PEDB-N2
O-PEDB-N2
Moisture Sensitivity Level
1
Non-rep Pk Forward Current-Max
500 A
500 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-50 °C
Output Current-Max
35 A
35 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
DISK BUTTON
DISK BUTTON
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
600 V
600 V
Reverse Recovery Time-Max
3 µs
Surface Mount
YES
YES
Terminal Finish
PURE TIN
Terminal Form
NO LEAD
NO LEAD
Terminal Position
END
END
Base Number Matches
3
1
Pin Count
2
Category CO2 Kg
8.8
Candidate List Date
2020-06-25
Reference Standard
UL RECOGNIZED
Compare ARS35J with alternatives
Compare AR3506G with alternatives