AP18N20GJ-HF
vs
STB19NB20-1
feature comparison
| Part Life Cycle Code |
Contact Manufacturer
|
Obsolete
|
| Ihs Manufacturer |
ADVANCED POWER ELECTRONICS CORP
|
STMICROELECTRONICS
|
| Part Package Code |
TO-251
|
TO-262AA
|
| Package Description |
IN-LINE, R-PSIP-T3
|
TABLESS TO-220, I2PAK-3
|
| Pin Count |
3
|
3
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
200 V
|
200 V
|
| Drain Current-Max (ID) |
18 A
|
19 A
|
| Drain-source On Resistance-Max |
0.17 Ω
|
0.18 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-251
|
TO-262AA
|
| JESD-30 Code |
R-PSIP-T3
|
R-PSIP-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
60 A
|
76 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Avalanche Energy Rating (Eas) |
|
580 mJ
|
| JESD-609 Code |
|
e3
|
| Power Dissipation-Max (Abs) |
|
125 W
|
| Terminal Finish |
|
TIN
|
|
|
|
Compare AP18N20GJ-HF with alternatives
Compare STB19NB20-1 with alternatives