933505310215 vs 1SV101 feature comparison

933505310215 NXP Semiconductors

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1SV101 Toshiba America Electronic Components

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Pbfree Code Yes No
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS TOSHIBA CORP
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.80
Breakdown Voltage-Min 30 V 15 V
Configuration SINGLE SINGLE
Diode Capacitance Ratio-Min 5 2
Diode Capacitance-Nom 31 pF 30 pF
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
Frequency Band VERY HIGH FREQUENCY
JESD-30 Code R-PDSO-G3 R-PSIP-T2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 2
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish TIN Tin/Lead (Sn/Pb)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Variable Capacitance Diode Classification ABRUPT ABRUPT
Base Number Matches 1 1
Part Package Code SOD
Package Description R-PSIP-T2
Pin Count 2
Additional Feature CAPACITANCE MATCHED TO 3%
Rep Pk Reverse Voltage-Max 15 V
Reverse Current-Max 1e-8 µA
Reverse Test Voltage 15 V

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