6167LA25EB vs MAR5114CB feature comparison

6167LA25EB Integrated Device Technology Inc

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MAR5114CB Zarlink Semiconductor Inc

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTEGRATED DEVICE TECHNOLOGY INC ZARLINK SEMICONDUCTOR INC
Package Description 0.300 INCH, CERAMIC, PACKAGE-20 DIP, DIP18,.3
Reach Compliance Code not_compliant unknown
ECCN Code 3A001.A.2.C 3A001.A.2.C
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 25 ns 135 ns
I/O Type SEPARATE COMMON
JESD-30 Code R-CDFP-F20 R-XDIP-T18
JESD-609 Code e0 e0
Memory Density 16384 bit 4096 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 1 4
Number of Functions 1
Number of Terminals 20 18
Number of Words 16384 words 1024 words
Number of Words Code 16000 1000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -55 °C
Organization 16KX1 1KX4
Output Characteristics 3-STATE 3-STATE
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC
Package Code DFP DIP
Package Equivalence Code FL20,.3 DIP18,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style FLATPACK IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Screening Level MIL-STD-883 Class B 38535Q/M;38534H;883B
Standby Current-Max 0.0002 A 0.002 A
Standby Voltage-Min 2 V 2 V
Supply Current-Max 0.075 mA 0.035 mA
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount YES NO
Technology CMOS CMOS
Temperature Grade MILITARY MILITARY
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form FLAT THROUGH-HOLE
Terminal Pitch 1.27 mm 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 1 4
Total Dose 100k Rad(Si) V

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Compare MAR5114CB with alternatives