6167LA25EB vs 8413206SA feature comparison

6167LA25EB Integrated Device Technology Inc

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8413206SA Pyramid Semiconductor Corporation

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INTEGRATED DEVICE TECHNOLOGY INC PYRAMID SEMICONDUCTOR CORP
Package Description 0.300 INCH, CERAMIC, PACKAGE-20 DFP, FL20,.3
Reach Compliance Code not_compliant compliant
ECCN Code 3A001.A.2.C 3A001.A.2.C
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 25 ns 120 ns
I/O Type SEPARATE SEPARATE
JESD-30 Code R-CDFP-F20 R-XDFP-F20
JESD-609 Code e0
Memory Density 16384 bit 4096 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 1 1
Number of Functions 1 1
Number of Terminals 20 18
Number of Words 16384 words 4096 words
Number of Words Code 16000 4000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -55 °C
Organization 16KX1 4KX1
Output Characteristics 3-STATE 3-STATE
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, GLASS-SEALED
Package Code DFP DFP
Package Equivalence Code FL20,.3 FL20,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style FLATPACK IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Screening Level MIL-STD-883 Class B 38535Q/M;38534H;883B
Standby Current-Max 0.0002 A 0.0002 A
Standby Voltage-Min 2 V 2 V
Supply Current-Max 0.075 mA 0.07 mA
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade MILITARY MILITARY
Terminal Finish TIN LEAD
Terminal Form FLAT FLAT
Terminal Pitch 1.27 mm 1.27 mm
Terminal Position DUAL DUAL
Base Number Matches 2 1

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