5962-9679602HYC
vs
WME128K8-250CQ
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
MICROSEMI CORP
WHITE MICROELECTRONICS
Part Package Code
DIP
Package Description
DIP,
,
Pin Count
32
Reach Compliance Code
compliant
unknown
ECCN Code
3A001.A.2.C
HTS Code
8542.32.00.51
Access Time-Max
250 ns
250 ns
JESD-30 Code
R-CDIP-T32
R-CDIP-T32
JESD-609 Code
e4
Length
42.4 mm
Memory Density
1048576 bit
1048576 bit
Memory IC Type
EEPROM
EEPROM
Memory Width
8
8
Number of Functions
1
1
Number of Terminals
32
32
Number of Words
131072 words
131072 words
Number of Words Code
128000
128000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
125 °C
125 °C
Operating Temperature-Min
-55 °C
-55 °C
Organization
128KX8
128KX8
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Code
DIP
DIP
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Programming Voltage
5 V
5 V
Qualification Status
Not Qualified
Not Qualified
Screening Level
MIL-STD-883
Supply Voltage-Max (Vsup)
5.5 V
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
MILITARY
MILITARY
Terminal Finish
GOLD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.5 mm
Terminal Position
DUAL
DUAL
Write Cycle Time-Max (tWC)
10 ms
Base Number Matches
4
4
Additional Feature
WRITE ENDURANCE 10000 CYCLES; 10 YEARS DATA RETENTION; HARDWARE AND SOFTWARE DATA PROTECTION
Data Retention Time-Min
10
Endurance
10000 Write/Erase Cycles
Output Characteristics
3-STATE
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