3.0SMCJ6.0CAT/R7 vs 3.0SMCJ6.0CT/R13 feature comparison

3.0SMCJ6.0CAT/R7 PanJit Semiconductor

Buy Now Datasheet

3.0SMCJ6.0CT/R13 PanJit Semiconductor

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer PAN JIT INTERNATIONAL INC PAN JIT INTERNATIONAL INC
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 7.67 V 8.45 V
Breakdown Voltage-Min 6.67 V 6.67 V
Breakdown Voltage-Nom 7.17 V 7.56 V
Clamping Voltage-Max 10.3 V 11.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Reference Standard MIL-STD-750; UL RECOGNIZED MIL-STD-750; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 6 V 6 V
Reverse Current-Max 2000 µA 2000 µA
Reverse Test Voltage 6 V 6 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 2

Compare 3.0SMCJ6.0CAT/R7 with alternatives

Compare 3.0SMCJ6.0CT/R13 with alternatives