3.0SMCJ6.0CT/R13 vs 3.0SMCJ6.0C feature comparison

3.0SMCJ6.0CT/R13 PanJit Semiconductor

Buy Now Datasheet

3.0SMCJ6.0C Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer PAN JIT INTERNATIONAL INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code not_compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 8.45 V 8.15 V
Breakdown Voltage-Min 6.67 V 6.67 V
Breakdown Voltage-Nom 7.56 V
Clamping Voltage-Max 11.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Reference Standard MIL-STD-750; UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 6 V 6 V
Reverse Current-Max 2000 µA
Reverse Test Voltage 6 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 17
Rohs Code No
Package Description R-PDSO-C2
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 3.0SMCJ6.0CT/R13 with alternatives

Compare 3.0SMCJ6.0C with alternatives