3.0SMCJ58CAT/R7 vs US1006FL-AU_R2_000A1 feature comparison

3.0SMCJ58CAT/R7 PanJit Semiconductor

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US1006FL-AU_R2_000A1 PanJit Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC PAN JIT INTERNATIONAL INC
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.80
Breakdown Voltage-Max 74.1 V
Breakdown Voltage-Min 64.4 V
Breakdown Voltage-Nom 69.25 V
Clamping Voltage-Max 93.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE RECTIFIER DIODE
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-F2
Non-rep Peak Rev Power Dis-Max 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL
Reference Standard MIL-STD-750; UL RECOGNIZED AEC-Q101
Rep Pk Reverse Voltage-Max 58 V 600 V
Reverse Current-Max 3 µA
Reverse Test Voltage 58 V
Surface Mount YES YES
Technology AVALANCHE
Terminal Form C BEND FLAT
Terminal Position DUAL DUAL
Base Number Matches 1 1
Application GENERAL PURPOSE
Number of Phases 1
Output Current-Max 1 A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Recovery Time-Max 0.1 µs
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 3.0SMCJ58CAT/R7 with alternatives

Compare US1006FL-AU_R2_000A1 with alternatives