3.0SMCJ58CAT/R7
vs
US1006FL-R1-10001
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
PAN JIT INTERNATIONAL INC
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.80
Breakdown Voltage-Max
74.1 V
Breakdown Voltage-Min
64.4 V
Breakdown Voltage-Nom
69.25 V
Clamping Voltage-Max
93.6 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
RECTIFIER DIODE
JEDEC-95 Code
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-F2
Non-rep Peak Rev Power Dis-Max
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
Reference Standard
MIL-STD-750; UL RECOGNIZED
Rep Pk Reverse Voltage-Max
58 V
600 V
Reverse Current-Max
3 µA
1 µA
Reverse Test Voltage
58 V
600 V
Surface Mount
YES
YES
Technology
AVALANCHE
Terminal Form
C BEND
FLAT
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Application
FAST RECOVERY
Forward Voltage-Max (VF)
1.7 V
Non-rep Pk Forward Current-Max
30 A
Number of Phases
1
Output Current-Max
1 A
Reverse Recovery Time-Max
0.1 µs
Compare 3.0SMCJ58CAT/R7 with alternatives
Compare US1006FL-R1-10001 with alternatives