2N6788-QR-BR1
vs
JANTX2N6788
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
TT ELECTRONICS PLC
INTERSIL CORP
Package Description
CYLINDRICAL, O-MBCY-W3
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Category CO2 Kg
8.8
8.8
EU RoHS Version
RoHS 2 (2011/65/EU)
EU RoHS Exemptions
7(a)
Candidate List Date
2015-12-17
EFUP
50
Conflict Mineral Status
DRC Conflict Free Undeterminable
Conflict Mineral Status Source
Conflict Minerals Statement
Case Connection
DRAIN
DRAIN
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
6 A
6 A
Drain-source On Resistance-Max
0.345 Ω
0.3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
TO-205AF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
JESD-609 Code
e1
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
24 A
24 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN SILVER COPPER
NOT SPECIFIED
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
HTS Code
8541.29.00.95
Additional Feature
RADIATION HARDENED
Feedback Cap-Max (Crss)
100 pF
Power Dissipation Ambient-Max
20 W
Reference Standard
MILITARY STANDARD (USA)
Turn-off Time-Max (toff)
110 ns
Turn-on Time-Max (ton)
110 ns
Compare 2N6788-QR-BR1 with alternatives
Compare JANTX2N6788 with alternatives