JANTX2N6788
vs
2N6788R1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MICROSEMI CORP
TT ELECTRONICS PLC
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Additional Feature
RADIATION HARDENED
Case Connection
DRAIN
DRAIN
Configuration
SINGLE
SINGLE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
6 A
6 A
Drain-source On Resistance-Max
0.3 Ω
0.345 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-39
TO-205AF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
JESD-609 Code
e0
e1
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
20 W
Pulsed Drain Current-Max (IDM)
24 A
24 A
Qualification Status
Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN SILVER COPPER
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
9
2
Package Description
CYLINDRICAL, O-MBCY-W3
Compare JANTX2N6788 with alternatives
Compare 2N6788R1 with alternatives