2N6659
vs
FDN359BN
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
SILICONIX INC
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
BCY
SSOT
Pin Count
2
3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
2 A
2.7 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
e3
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
6.25 W
0.5 W
Surface Mount
NO
YES
Terminal Finish
Tin/Lead (Sn/Pb)
MATTE TIN
Base Number Matches
2
3
Pbfree Code
Package Description
SUPERSOT-3
Manufacturer Package Code
MOLDED PACKAGE, SUPERSOT, 3 LEAD
HTS Code
8541.21.00.95
DS Breakdown Voltage-Min
30 V
Drain-source On Resistance-Max
0.046 Ω
Feedback Cap-Max (Crss)
100 pF
JESD-30 Code
R-PDSO-G3
Moisture Sensitivity Level
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compare 2N6659 with alternatives
Compare FDN359BN with alternatives