2N60-TN3-R
vs
2N65LG-TMA-T
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
UNISONIC TECHNOLOGIES CO LTD
|
UNISONIC TECHNOLOGIES CO LTD
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Part Package Code |
|
TO-251
|
| Package Description |
|
IN-LINE, R-PSIP-T3
|
| Pin Count |
|
3
|
| Avalanche Energy Rating (Eas) |
|
140 mJ
|
| Case Connection |
|
DRAIN
|
| Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
|
650 V
|
| Drain Current-Max (ID) |
|
2 A
|
| Drain-source On Resistance-Max |
|
5 Ω
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
|
TO-251
|
| JESD-30 Code |
|
R-PSIP-T3
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
IN-LINE
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Polarity/Channel Type |
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
|
44 W
|
| Pulsed Drain Current-Max (IDM) |
|
8 A
|
| Surface Mount |
|
NO
|
| Terminal Form |
|
THROUGH-HOLE
|
| Terminal Position |
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare 2N60-TN3-R with alternatives
Compare 2N65LG-TMA-T with alternatives