2N60-TN3-R
vs
2N60LG-TMA-T
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
UNISONIC TECHNOLOGIES CO LTD
|
UNISONIC TECHNOLOGIES CO LTD
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Base Number Matches |
1
|
1
|
Rohs Code |
|
Yes
|
Part Package Code |
|
TO-251
|
Package Description |
|
IN-LINE, R-PSIP-T3
|
Pin Count |
|
3
|
Avalanche Energy Rating (Eas) |
|
140 mJ
|
Case Connection |
|
DRAIN
|
Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
|
600 V
|
Drain Current-Max (ID) |
|
2 A
|
Drain-source On Resistance-Max |
|
5 Ω
|
FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
|
10 pF
|
JEDEC-95 Code |
|
TO-251
|
JESD-30 Code |
|
R-PSIP-T3
|
Number of Elements |
|
1
|
Number of Terminals |
|
3
|
Operating Mode |
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
|
150 °C
|
Operating Temperature-Min |
|
-55 °C
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
IN-LINE
|
Polarity/Channel Type |
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
|
44 W
|
Pulsed Drain Current-Max (IDM) |
|
8 A
|
Surface Mount |
|
NO
|
Terminal Form |
|
THROUGH-HOLE
|
Terminal Position |
|
SINGLE
|
Transistor Application |
|
SWITCHING
|
Transistor Element Material |
|
SILICON
|
Turn-off Time-Max (toff) |
|
150 ns
|
Turn-on Time-Max (ton) |
|
120 ns
|
|
|
|
Compare 2N60-TN3-R with alternatives
Compare 2N60LG-TMA-T with alternatives