1T2GHA1G
vs
JAN1N5804URS
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
DEFENSE LOGISTICS AGENCY
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.80
|
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
O-PALF-W2
|
O-LELF-R2
|
| JESD-609 Code |
e3
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Reference Standard |
AEC-Q101
|
MIL-19500
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Surface Mount |
NO
|
YES
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
WIRE
|
WRAP AROUND
|
| Terminal Position |
AXIAL
|
END
|
| Base Number Matches |
1
|
1
|
| Breakdown Voltage-Min |
|
110 V
|
| Qualification Status |
|
Qualified
|
| Reverse Recovery Time-Max |
|
0.025 µs
|
| Reverse Test Voltage |
|
100 V
|
|
|
|
Compare 1T2GHA1G with alternatives
Compare JAN1N5804URS with alternatives