1SS181TE85R
vs
1N5620UV
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
TOSHIBA CORP
|
SENSITRON SEMICONDUCTOR
|
| Package Description |
SC-59, TO-236MOD, 3 PIN
|
O-LELF-R2
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.80
|
| Application |
FAST RECOVERY
|
|
| Configuration |
COMMON ANODE, 2 ELEMENTS
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.2 V
|
|
| JESD-30 Code |
R-PDSO-G3
|
O-LELF-R2
|
| Non-rep Pk Forward Current-Max |
2 A
|
|
| Number of Elements |
2
|
1
|
| Number of Phases |
1
|
|
| Number of Terminals |
3
|
2
|
| Operating Temperature-Max |
125 °C
|
|
| Output Current-Max |
0.1 A
|
1 A
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Power Dissipation-Max |
0.225 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
AEC-Q101
|
MIL-19500
|
| Rep Pk Reverse Voltage-Max |
85 V
|
|
| Reverse Current-Max |
0.5 µA
|
|
| Reverse Recovery Time-Max |
0.004 µs
|
2 µs
|
| Reverse Test Voltage |
80 V
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
WRAP AROUND
|
| Terminal Position |
DUAL
|
END
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
1
|
1
|
| Case Connection |
|
ISOLATED
|
|
|
|
Compare 1SS181TE85R with alternatives
Compare 1N5620UV with alternatives