1SMA10AT3
vs
SA8.0-G
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
MOTOROLA INC
|
SENSITRON SEMICONDUCTOR
|
| Package Description |
R-PDSO-C2
|
O-PALF-W2
|
| Pin Count |
2
|
2
|
| Manufacturer Package Code |
CASE 403B-01
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Min |
11.1 V
|
8.99 V
|
| Clamping Voltage-Max |
17 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
R-PDSO-C2
|
O-PALF-W2
|
| JESD-609 Code |
e0
|
|
| Non-rep Peak Rev Power Dis-Max |
400 W
|
500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reverse Current-Max |
2.5 µA
|
|
| Surface Mount |
YES
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
C BEND
|
WIRE
|
| Terminal Position |
DUAL
|
AXIAL
|
| Base Number Matches |
1
|
2
|
| Pbfree Code |
|
Yes
|
| Rohs Code |
|
Yes
|
| Part Package Code |
|
DO-15
|
| Breakdown Voltage-Max |
|
10.9 V
|
| Case Connection |
|
ISOLATED
|
| JEDEC-95 Code |
|
DO-15
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Min |
|
-65 °C
|
| Power Dissipation-Max |
|
3 W
|
| Reference Standard |
|
UL RECOGNIZED
|
| Rep Pk Reverse Voltage-Max |
|
8 V
|
|
|
|
Compare 1SMA10AT3 with alternatives
Compare SA8.0-G with alternatives