1N902
vs
1N5620UV
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
SENSITRON SEMICONDUCTOR
|
| Package Description |
E-PALF-W2
|
O-LELF-R2
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.80
|
| Application |
GENERAL PURPOSE
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
E-PALF-W2
|
O-LELF-R2
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
0.01 A
|
1 A
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
ELLIPTICAL
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Power Dissipation-Max |
0.1 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reverse Current-Max |
1 µA
|
|
| Reverse Recovery Time-Max |
0.3 µs
|
2 µs
|
| Surface Mount |
NO
|
YES
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
WRAP AROUND
|
| Terminal Position |
AXIAL
|
END
|
| Base Number Matches |
1
|
1
|
| Reference Standard |
|
MIL-19500
|
|
|
|
Compare 1N902 with alternatives
Compare 1N5620UV with alternatives